SQ2308CES-T1_BE3

Vishay Siliconix

Product No:

SQ2308CES-T1_BE3

Manufacturer:

Package:

SOT-23-3 (TO-236)

Datasheet:

Description:

MOSFET N-CH 60V 2.3A SOT23-3

Quantity:

Delivery:

Payment:

In Stock : 30000

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	205 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	150mOhm @ 2.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	2W (Tc)
Series	Automotive, AEC-Q101, TrenchFET®
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.3A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SQ2308