SQ2309CES-T1_GE3
detaildesc

SQ2309CES-T1_GE3

Vishay Siliconix

Product No:

SQ2309CES-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

SOT-23-3 (TO-236)

Datasheet:

-

Description:

AUTOMOTIVE P-CHANNEL 60 V (D-S)

Quantity:

Delivery:

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Payment:

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In Stock : 1301

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.314328

    $0.314328

  • 10

    $0.275037

    $2.75037

  • 50

    $0.235746

    $11.7873

  • 100

    $0.216101

    $21.6101

  • 500

    $0.206278

    $103.139

  • 1000

    $0.196455

    $196.455

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 265 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 370mOhm @ 1.25A, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)