SQ2361AEES-T1_GE3
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SQ2361AEES-T1_GE3

Vishay Siliconix

Product No:

SQ2361AEES-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

-

Datasheet:

pdf

Description:

MOSFET P-CH 60V 2.8A SSOT23

Quantity:

Delivery:

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In Stock : 106233

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.248525

    $0.248525

  • 10

    $0.217459

    $2.17459

  • 50

    $0.186394

    $9.3197

  • 100

    $0.170861

    $17.0861

  • 500

    $0.163094

    $81.547

  • 1000

    $0.155328

    $155.328

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TA)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 30 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 170mOhm @ 2.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 2W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SQ2361