SQ3419AEEV-T1_BE3
detaildesc

SQ3419AEEV-T1_BE3

Vishay Siliconix

Product No:

SQ3419AEEV-T1_BE3

Manufacturer:

Vishay Siliconix

Package:

6-TSOP

Datasheet:

pdf

Description:

P-CHANNEL 40-V (D-S) 175C MOSFET

Quantity:

Delivery:

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In Stock : 2521

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.374136

    $0.374136

  • 10

    $0.327369

    $3.27369

  • 50

    $0.280602

    $14.0301

  • 100

    $0.257219

    $25.7219

  • 500

    $0.245527

    $122.7635

  • 1000

    $0.233835

    $233.835

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 975 pF @ 20 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 12.5 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 61mOhm @ 2.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package 6-TSOP
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 5W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case SOT-23-6 Thin, TSOT-23-6
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)