SQD23N06-31L_GE3
detaildesc

SQD23N06-31L_GE3

Vishay Siliconix

Product No:

SQD23N06-31L_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-252AA

Datasheet:

pdf

Description:

MOSFET N-CH 60V 23A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 2405

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.052415

    $1.052415

  • 10

    $0.947174

    $9.47174

  • 50

    $0.841932

    $42.0966

  • 100

    $0.736691

    $73.6691

  • 500

    $0.715642

    $357.821

  • 1000

    $0.70161

    $701.61

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 845 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 31mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 37W (Tc)
Series TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQD23