SQD50P04-09L_GE3
detaildesc

SQD50P04-09L_GE3

Vishay Siliconix

Product No:

SQD50P04-09L_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-252AA

Datasheet:

pdf

Description:

MOSFET P-CH 40V 50A TO252

Quantity:

Delivery:

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Payment:

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In Stock : 7106

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.057265

    $2.057265

  • 10

    $1.851538

    $18.51538

  • 50

    $1.645812

    $82.2906

  • 100

    $1.440085

    $144.0085

  • 500

    $1.39894

    $699.47

  • 1000

    $1.37151

    $1371.51

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6675 pF @ 20 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 155 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.4mOhm @ 17A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-252AA
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 136W (Tc)
Series TrenchFET®
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQD50