SQJ110EP-T1_GE3
detaildesc

SQJ110EP-T1_GE3

Vishay Siliconix

Product No:

SQJ110EP-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

AUTOMOTIVE N-CHANNEL 100 V (D-S)

Quantity:

Delivery:

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Payment:

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In Stock : 433

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.112737

    $1.112737

  • 10

    $1.001464

    $10.01464

  • 50

    $0.89019

    $44.5095

  • 100

    $0.778916

    $77.8916

  • 500

    $0.756661

    $378.3305

  • 1000

    $0.741825

    $741.825

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.3mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 500W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 170A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)