SQJQ466E-T1_GE3
detaildesc

SQJQ466E-T1_GE3

Vishay Siliconix

Product No:

SQJQ466E-T1_GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 8 x 8

Datasheet:

pdf

Description:

MOSFET N-CH 60V 200A PPAK 8 X 8

Quantity:

Delivery:

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Payment:

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In Stock : 1448

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.986547

    $1.986547

  • 10

    $1.787893

    $17.87893

  • 50

    $1.589238

    $79.4619

  • 100

    $1.390583

    $139.0583

  • 500

    $1.350852

    $675.426

  • 1000

    $1.324365

    $1324.365

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10210 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package PowerPAK® 8 x 8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 150W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case PowerPAK® 8 x 8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SQJQ466