SQM100N10-10_GE3
detaildesc

SQM100N10-10_GE3

Vishay Siliconix

Product No:

SQM100N10-10_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Datasheet:

pdf

Description:

MOSFET N-CH 100V 100A TO263

Quantity:

Delivery:

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Payment:

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In Stock : 141

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.208938

    $2.208938

  • 10

    $1.988044

    $19.88044

  • 50

    $1.76715

    $88.3575

  • 100

    $1.546256

    $154.6256

  • 500

    $1.502077

    $751.0385

  • 1000

    $1.472625

    $1472.625

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 8050 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 185 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.5mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-263 (D²Pak)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 375W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQM100