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SQM110P06-8M9L_GE3
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SQM110P06-8M9L_GE3

Vishay Siliconix

Product No:

SQM110P06-8M9L_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Datasheet:

pdf

Description:

MOSFET P-CH 60V 110A TO263

Quantity:

Delivery:

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In Stock : 548

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.2869

    $2.2869

  • 10

    $2.05821

    $20.5821

  • 50

    $1.82952

    $91.476

  • 100

    $1.60083

    $160.083

  • 500

    $1.555092

    $777.546

  • 1000

    $1.5246

    $1524.6

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7450 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.9mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-263 (D²Pak)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 230W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 110A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQM110