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SQM120N04-1M7L_GE3
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SQM120N04-1M7L_GE3

Vishay Siliconix

Product No:

SQM120N04-1M7L_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263

Datasheet:

pdf

Description:

MOSFET N-CH 40V 120A TO263

Quantity:

Delivery:

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Payment:

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In Stock : 1740

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.429753

    $2.429753

  • 10

    $2.186777

    $21.86777

  • 50

    $1.943802

    $97.1901

  • 100

    $1.700827

    $170.0827

  • 500

    $1.652232

    $826.116

  • 1000

    $1.619835

    $1619.835

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 14606 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 285 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package TO-263
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 375W (Tc)
Series TrenchFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SQM120