SQM120N10-3M8_GE3
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SQM120N10-3M8_GE3

Vishay Siliconix

Product No:

SQM120N10-3M8_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Datasheet:

pdf

Description:

MOSFET N-CH 100V 120A TO263

Quantity:

Delivery:

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In Stock : 723

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $7.5285

    $7.5285

  • 10

    $6.77565

    $67.7565

  • 50

    $6.0228

    $301.14

  • 100

    $5.26995

    $526.995

  • 500

    $5.11938

    $2559.69

  • 1000

    $5.019

    $5019

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 7230 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package TO-263 (D²Pak)
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 375W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SQM120