SQM35N30-97_GE3
detaildesc

SQM35N30-97_GE3

Vishay Siliconix

Product No:

SQM35N30-97_GE3

Manufacturer:

Vishay Siliconix

Package:

TO-263 (D²Pak)

Datasheet:

pdf

Description:

MOSFET N-CH 300V 35A TO263

Quantity:

Delivery:

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Payment:

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In Stock : 941

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.715615

    $2.715615

  • 10

    $2.444053

    $24.44053

  • 50

    $2.172492

    $108.6246

  • 100

    $1.900931

    $190.0931

  • 500

    $1.846618

    $923.309

  • 1000

    $1.81041

    $1810.41

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5650 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 97mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 250µA
Supplier Device Package TO-263 (D²Pak)
Drain to Source Voltage (Vdss) 300 V
Power Dissipation (Max) 375W (Tc)
Series Automotive, AEC-Q101, TrenchFET®
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number SQM35