SQS482EN-T1_BE3
detaildesc

SQS482EN-T1_BE3

Vishay Siliconix

Product No:

SQS482EN-T1_BE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Datasheet:

pdf

Description:

N-CHANNEL 30-V (D-S) 175C MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 5202

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5544

    $0.5544

  • 10

    $0.4851

    $4.851

  • 50

    $0.4158

    $20.79

  • 100

    $0.38115

    $38.115

  • 500

    $0.363825

    $181.9125

  • 1000

    $0.3465

    $346.5

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1865 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5mOhm @ 16.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 62W (Tc)
Series -
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)