SSM3J168F,LXHF
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SSM3J168F,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3J168F,LXHF

Package:

S-Mini

Datasheet:

-

Description:

SMOS LOW RON VDS:-60V VGSS:+10/-

Quantity:

Delivery:

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Payment:

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In Stock : 6524

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.168

    $0.168

  • 10

    $0.147

    $1.47

  • 50

    $0.126

    $6.3

  • 100

    $0.1155

    $11.55

  • 500

    $0.11025

    $55.125

  • 1000

    $0.105

    $105

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 82 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.55Ohm @ 200mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1mA
Supplier Device Package S-Mini
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 600mW (Ta)
Series Automotive, AEC-Q101, U-MOSVI
Package / Case TO-236-3, SC-59, SOT-23-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +10V, -20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)