SSM3J374R,LXHF
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SSM3J374R,LXHF

Toshiba Semiconductor and Storage

Product No:

SSM3J374R,LXHF

Package:

SOT-23F

Datasheet:

-

Description:

SMOS P-CH VDSS:-30V VGSS:-20/+10

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 5519

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.136416

    $0.136416

  • 10

    $0.119364

    $1.19364

  • 50

    $0.102312

    $5.1156

  • 100

    $0.093786

    $9.3786

  • 500

    $0.089523

    $44.7615

  • 1000

    $0.08526

    $85.26

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 5.9 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 71mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 100µA
Supplier Device Package SOT-23F
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 1W (Ta)
Series Automotive, AEC-Q101, U-MOSVI
Package / Case SOT-23-3 Flat Leads
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 4A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +10V, -20V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Package Tape & Reel (TR)