SSM3J66MFV,L3XHF

Toshiba Semiconductor and Storage

Product No:

SSM3J66MFV,L3XHF

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Package:

VESM

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Description:

AUTO AEC-Q SS MOS P-CH LOW VOLTA

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	100 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.6 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	390mOhm @ 800mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	VESM
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	150mW (Ta)
Series	U-MOSVI
Package / Case	SOT-723
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+6V, -8V
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Package	Tape & Reel (TR)