SSM3K357R,LF

Toshiba Semiconductor and Storage

Product No:

SSM3K357R,LF

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Package:

SOT-23F

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Description:

MOSFET N-CH 60V 650MA SOT23F

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	60 pF @ 12 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.8Ohm @ 150mA, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 1mA
Supplier Device Package	SOT-23F
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	1W (Ta)
Series	π-MOSV
Package / Case	SOT-23-3 Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	650mA (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	3V, 5V
Package	Tape & Reel (TR)
Base Product Number	SSM3K357