SSM5H90ATU,LF

Toshiba Semiconductor and Storage

Product No:

SSM5H90ATU,LF

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Package:

UFV

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Description:

MOSFET N-CH 20V 2.4A UFV

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	65mOhm @ 1.5A, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	UFV
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	500mW (Ta)
Series	-
Package / Case	5-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4V
Package	Tape & Reel (TR)
Base Product Number	SSM5H90