SSM6H19NU,LF

Toshiba Semiconductor and Storage

Product No:

SSM6H19NU,LF

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Package:

6-UDFN (2x2)

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Description:

MOSFET N-CH 40V 2A 6UDFN

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.2 nC @ 4.2 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	185mOhm @ 1A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	6-UDFN (2x2)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	1W (Ta)
Series	U-MOSVII-H
Package / Case	6-UDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM6H19