SSM6N16FUTE85LF
detaildesc

SSM6N16FUTE85LF

Toshiba Semiconductor and Storage

Product No:

SSM6N16FUTE85LF

Package:

US6

Datasheet:

-

Description:

MOSFET 2N-CH 20V 0.1A US6

Quantity:

Delivery:

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Payment:

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In Stock : 6096

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.0924

    $0.0924

  • 10

    $0.08085

    $0.8085

  • 50

    $0.0693

    $3.465

  • 100

    $0.063525

    $6.3525

  • 500

    $0.060638

    $30.319

  • 1000

    $0.05775

    $57.75

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
Gate Charge (Qg) (Max) @ Vgs -
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
Product Status Active
Vgs(th) (Max) @ Id 1.1V @ 100µA
Supplier Device Package US6
Drain to Source Voltage (Vdss) 20V
Series -
Package / Case 6-TSSOP, SC-88, SOT-363
Technology MOSFET (Metal Oxide)
Power - Max 200mW
Current - Continuous Drain (Id) @ 25°C 100mA
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Base Product Number SSM6N16