SSM6N68NU,LF

Toshiba Semiconductor and Storage

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SSM6N68NU,LF

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Package:

6-µDFN (2x2)

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Description:

SMALL LOW RON DUAL NCH MOSFETS H

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 1.8V Drive
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	129pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	1.8nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	84mOhm @ 2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	6-µDFN (2x2)
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	6-WDFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta)
Current - Continuous Drain (Id) @ 25°C	4A (Ta)
Mfr	Toshiba Semiconductor and Storage
Package	Tape & Reel (TR)
Base Product Number	SSM6N68