Toshiba Semiconductor and Storage
Product No:
SSM6N7002KFU,LXH
Manufacturer:
Package:
US6
Datasheet:
-
Description:
SMOS 2 IN 1 DUAL NCH HIGH ESD PR
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.094416
$0.094416
10
$0.082614
$0.82614
50
$0.070812
$3.5406
100
$0.064911
$6.4911
500
$0.06196
$30.98
1000
$0.05901
$59.01
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Operating Temperature | 150°C |
FET Feature | - |
Configuration | 2 N-Channel (Dual) |
Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 100mA, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.1V @ 250µA |
Supplier Device Package | US6 |
Drain to Source Voltage (Vdss) | 60V |
Series | Automotive, AEC-Q101, U-MOSVII-H |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Technology | MOSFET (Metal Oxide) |
Power - Max | 285mW (Ta) |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
Mfr | Toshiba Semiconductor and Storage |
Package | Tape & Reel (TR) |
Base Product Number | SSM6N7002 |