STB200N6F3
detaildesc

STB200N6F3

STMicroelectronics

Product No:

STB200N6F3

Manufacturer:

STMicroelectronics

Package:

D2PAK

Datasheet:

pdf

Description:

MOSFET N-CH 60V 120A D2PAK

Quantity:

Delivery:

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In Stock : 218

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.092952

    $4.092952

  • 10

    $3.683657

    $36.83657

  • 50

    $3.274362

    $163.7181

  • 100

    $2.865067

    $286.5067

  • 500

    $2.783208

    $1391.604

  • 1000

    $2.728635

    $2728.635

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.6mOhm @ 60A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 330W (Tc)
Series STripFET™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB200N