STB50N65DM6
detaildesc

STB50N65DM6

STMicroelectronics

Product No:

STB50N65DM6

Manufacturer:

STMicroelectronics

Package:

D²PAK (TO-263)

Datasheet:

pdf

Description:

MOSFET N-CH 650V 33A D2PAK

Quantity:

Delivery:

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In Stock : 2785

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.788497

    $5.788497

  • 10

    $5.209647

    $52.09647

  • 50

    $4.630798

    $231.5399

  • 100

    $4.051948

    $405.1948

  • 500

    $3.936178

    $1968.089

  • 1000

    $3.858998

    $3858.998

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 91mOhm @ 16.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.75V @ 250µA
Supplier Device Package D²PAK (TO-263)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 250W (Tc)
Series MDmesh™ DM6
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB50