STB9NK80Z
detaildesc

STB9NK80Z

STMicroelectronics

Product No:

STB9NK80Z

Manufacturer:

STMicroelectronics

Package:

D2PAK

Datasheet:

pdf

Description:

MOSFET N-CH 800V 5.2A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 647

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.525702

    $1.525702

  • 10

    $1.373132

    $13.73132

  • 50

    $1.220562

    $61.0281

  • 100

    $1.067992

    $106.7992

  • 500

    $1.037478

    $518.739

  • 1000

    $1.017135

    $1017.135

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1138 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 100µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 125W (Tc)
Series Automotive, AEC-Q101, SuperMESH™
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STB9