STH315N10F7-6
detaildesc

STH315N10F7-6

STMicroelectronics

Product No:

STH315N10F7-6

Manufacturer:

STMicroelectronics

Package:

H2PAK-6

Datasheet:

pdf

Description:

MOSFET N-CH 100V 180A H2PAK-6

Quantity:

Delivery:

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In Stock : 1836

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.244625

    $4.244625

  • 10

    $3.820162

    $38.20162

  • 50

    $3.3957

    $169.785

  • 100

    $2.971237

    $297.1237

  • 500

    $2.886345

    $1443.1725

  • 1000

    $2.82975

    $2829.75

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 12800 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.3mOhm @ 60A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 250µA
Supplier Device Package H2PAK-6
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 315W (Tc)
Series Automotive, AEC-Q101, DeepGATE™, STripFET™ VII
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number STH315