STI10N62K3
detaildesc

STI10N62K3

STMicroelectronics

Product No:

STI10N62K3

Manufacturer:

STMicroelectronics

Package:

I2PAK

Datasheet:

pdf

Description:

MOSFET N-CH 620V 8.4A I2PAK

Quantity:

Delivery:

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In Stock : 702

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.650127

    $1.650127

  • 10

    $1.485115

    $14.85115

  • 50

    $1.320102

    $66.0051

  • 100

    $1.155089

    $115.5089

  • 500

    $1.122087

    $561.0435

  • 1000

    $1.100085

    $1100.085

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 750mOhm @ 4A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4.5V @ 100µA
Supplier Device Package I2PAK
Drain to Source Voltage (Vdss) 620 V
Power Dissipation (Max) 125W (Tc)
Series SuperMESH3™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.4A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STI10N