STI10NM60N
detaildesc

STI10NM60N

STMicroelectronics

Product No:

STI10NM60N

Manufacturer:

STMicroelectronics

Package:

I2PAK (TO-262)

Datasheet:

pdf

Description:

MOSFET N-CH 600V 10A I2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 708

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.736595

    $1.736595

  • 10

    $1.562936

    $15.62936

  • 50

    $1.389276

    $69.4638

  • 100

    $1.215617

    $121.5617

  • 500

    $1.180885

    $590.4425

  • 1000

    $1.15773

    $1157.73

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 540 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I2PAK (TO-262)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 70W (Tc)
Series MDmesh™ II
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STI10N