STW50N65DM2AG
detaildesc

STW50N65DM2AG

STMicroelectronics

Product No:

STW50N65DM2AG

Manufacturer:

STMicroelectronics

Package:

TO-247-3

Datasheet:

pdf

Description:

MOSFET N-CH 650V 28A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 465

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.341297

    $5.341297

  • 10

    $4.807168

    $48.07168

  • 50

    $4.273038

    $213.6519

  • 100

    $3.738908

    $373.8908

  • 500

    $3.632082

    $1816.041

  • 1000

    $3.560865

    $3560.865

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 87mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 300W (Tc)
Series Automotive, AEC-Q101, MDmesh™ DM2
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STW50