STW65N65DM2AG
detaildesc

STW65N65DM2AG

STMicroelectronics

Product No:

STW65N65DM2AG

Manufacturer:

STMicroelectronics

Package:

TO-247-3

Datasheet:

pdf

Description:

MOSFET N-CH 650V 60A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 1585

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $8.053313

    $8.053313

  • 10

    $7.247981

    $72.47981

  • 50

    $6.44265

    $322.1325

  • 100

    $5.637319

    $563.7319

  • 500

    $5.476253

    $2738.1265

  • 1000

    $5.368875

    $5368.875

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-247-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 446W (Tc)
Series Automotive, AEC-Q101, MDmesh™ DM2
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr STMicroelectronics
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number STW65