SUD20N10-66L-GE3

Vishay Siliconix

Product No:

SUD20N10-66L-GE3

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Package:

TO-252

Datasheet:

Description:

MOSFET N-CH 100V 16.9A TO252

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	66mOhm @ 6.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-252
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	2.1W (Ta), 41.7W (Tc)
Series	TrenchFET®
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	16.9A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SUD20