SUP90100E-GE3
detaildesc

SUP90100E-GE3

Vishay Siliconix

Product No:

SUP90100E-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

N-CHANNEL 200 V (D-S) MOSFET TO-

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 340

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.56914

    $2.56914

  • 10

    $2.312226

    $23.12226

  • 50

    $2.055312

    $102.7656

  • 100

    $1.798398

    $179.8398

  • 500

    $1.747015

    $873.5075

  • 1000

    $1.71276

    $1712.76

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 10.9mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 375W (Tc)
Series TrenchFET®
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Bulk