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TJ10S04M3L(T6L1,NQ
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TJ10S04M3L(T6L1,NQ

Toshiba Semiconductor and Storage

Product No:

TJ10S04M3L(T6L1,NQ

Package:

DPAK+

Datasheet:

-

Description:

MOSFET P-CH 40V 10A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 1659

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.75789

    $0.75789

  • 10

    $0.682101

    $6.82101

  • 50

    $0.606312

    $30.3156

  • 100

    $0.530523

    $53.0523

  • 500

    $0.515365

    $257.6825

  • 1000

    $0.50526

    $505.26

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 930 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 44mOhm @ 5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 27W (Tc)
Series U-MOSVI
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) +10V, -20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TJ10S04