TJ200F04M3L,LXHQ

Toshiba Semiconductor and Storage

Product No:

TJ200F04M3L,LXHQ

Manufacturer:

Package:

TO-220SM(W)

Datasheet:

Description:

MOSFET P-CH 40V 200A TO220SM

Quantity:

Delivery:

Payment:

In Stock : 679

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1280 pF @ 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	460 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.8mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 1mA
Supplier Device Package	TO-220SM(W)
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	375W (Tc)
Series	U-MOSVI
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	200A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	+10V, -20V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Package	Tape & Reel (TR)
Base Product Number	TJ200F04