TK10P50W,RQ
detaildesc

TK10P50W,RQ

Toshiba Semiconductor and Storage

Product No:

TK10P50W,RQ

Package:

DPAK

Datasheet:

-

Description:

PB-F POWER MOSFET TRANSISTOR DPA

Quantity:

Delivery:

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Payment:

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In Stock : 1389

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.393875

    $1.393875

  • 10

    $1.254487

    $12.54487

  • 50

    $1.1151

    $55.755

  • 100

    $0.975713

    $97.5713

  • 500

    $0.947835

    $473.9175

  • 1000

    $0.92925

    $929.25

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 430mOhm @ 4.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 500µA
Supplier Device Package DPAK
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 80W (Tc)
Series DTMOSIV
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9.7A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)