TK16G60W,RVQ
detaildesc

TK16G60W,RVQ

Toshiba Semiconductor and Storage

Product No:

TK16G60W,RVQ

Package:

D2PAK

Datasheet:

-

Description:

MOSFET N CH 600V 15.8A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 678

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $5.364765

    $5.364765

  • 10

    $4.828289

    $48.28289

  • 50

    $4.291812

    $214.5906

  • 100

    $3.755336

    $375.5336

  • 500

    $3.64804

    $1824.02

  • 1000

    $3.57651

    $3576.51

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 190mOhm @ 7.9A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 790µA
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 130W (Tc)
Series DTMOSIV
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK16G60