TK190E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK190E65Z,S1X

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Package:

TO-220

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Description:

650V DTMOS VI TO-220 190MOHM

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Operating Temperature	150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	190mOhm @ 7.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 610µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	130W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	15A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube