TK1R4S04PB,LXHQ
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TK1R4S04PB,LXHQ

Toshiba Semiconductor and Storage

Product No:

TK1R4S04PB,LXHQ

Package:

DPAK+

Datasheet:

-

Description:

MOSFET N-CH 40V 120A DPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3141

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.240312

    $1.240312

  • 10

    $1.116281

    $11.16281

  • 50

    $0.99225

    $49.6125

  • 100

    $0.868219

    $86.8219

  • 500

    $0.843413

    $421.7065

  • 1000

    $0.826875

    $826.875

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.9mOhm @ 60A, 6V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 180W (Tc)
Series U-MOSIX-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 120A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number TK1R4S04