TK22A10N1,S4X

Toshiba Semiconductor and Storage

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TK22A10N1,S4X

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Package:

TO-220SIS

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Description:

MOSFET N-CH 100V 22A TO220SIS

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 50 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13.8mOhm @ 11A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 300µA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	30W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK22A10