TK2A65D(STA4,Q,M)
Toshiba Semiconductor and Storage
Product No:
TK2A65D(STA4,Q,M)
Manufacturer:
Package:
TO-220SIS
Datasheet:
-
Description:
MOSFET N-CH 650V 2A TO220SIS
Quantity:
Delivery:
Payment:
In Stock : 44
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.819
$0.819
10
$0.7371
$7.371
50
$0.6552
$32.76
100
$0.5733
$57.33
500
$0.55692
$278.46
1000
$0.546
$546
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Product Information
Parameter Info
User Guide
| Operating Temperature | 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 3.26Ohm @ 1A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Supplier Device Package | TO-220SIS |
| Drain to Source Voltage (Vdss) | 650 V |
| Power Dissipation (Max) | 30W (Tc) |
| Series | π-MOSVII |
| Package / Case | TO-220-3 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Mfr | Toshiba Semiconductor and Storage |
| Vgs (Max) | ±30V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tube |
| Base Product Number | TK2A65 |
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