TK31J60W,S1VQ

Toshiba Semiconductor and Storage

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TK31J60W,S1VQ

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Package:

TO-3P(N)

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Description:

MOSFET N-CH 600V 30.8A TO3P

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3000 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	88mOhm @ 15.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 1.5mA
Supplier Device Package	TO-3P(N)
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	230W (Tc)
Series	DTMOSIV
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	30.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK31J60