TK31V60W5,LVQ
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TK31V60W5,LVQ

Toshiba Semiconductor and Storage

Product No:

TK31V60W5,LVQ

Package:

4-DFN-EP (8x8)

Datasheet:

-

Description:

MOSFET N-CH 600V 30.8A 4DFN

Quantity:

Delivery:

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Payment:

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In Stock : 3285

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.787875

    $3.787875

  • 10

    $3.409088

    $34.09088

  • 50

    $3.0303

    $151.515

  • 100

    $2.651512

    $265.1512

  • 500

    $2.575755

    $1287.8775

  • 1000

    $2.52525

    $2525.25

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TA)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 109mOhm @ 15.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Supplier Device Package 4-DFN-EP (8x8)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 240W (Tc)
Series DTMOSIV
Package / Case 4-VSFN Exposed Pad
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number TK31V60