TK39A60W,S4VX

Toshiba Semiconductor and Storage

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TK39A60W,S4VX

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TO-220SIS

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Description:

MOSFET N-CH 600V 38.8A TO220SIS

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Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	4100 pF @ 300 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	65mOhm @ 19.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 1.9mA
Supplier Device Package	TO-220SIS
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	50W (Tc)
Series	DTMOSIV
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	38.8A (Ta)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK39A60