TK39N60W,S1VF
detaildesc

TK39N60W,S1VF

Toshiba Semiconductor and Storage

Product No:

TK39N60W,S1VF

Package:

TO-247

Datasheet:

-

Description:

MOSFET N CH 600V 38.8A TO247

Quantity:

Delivery:

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Payment:

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In Stock : 7

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.851

    $4.851

  • 10

    $4.3659

    $43.659

  • 50

    $3.8808

    $194.04

  • 100

    $3.3957

    $339.57

  • 500

    $3.29868

    $1649.34

  • 1000

    $3.234

    $3234

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 65mOhm @ 19.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 1.9mA
Supplier Device Package TO-247
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 270W (Tc)
Series DTMOSIV
Package / Case TO-247-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 38.8A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK39N60