TK3R2E06PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK3R2E06PL,S1X

Manufacturer:

Package:

TO-220

Datasheet:

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 5

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	5000 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.2mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 700µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	168W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube
Base Product Number	TK3R2E06