TK46E08N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK46E08N1,S1X

Manufacturer:

Package:

TO-220

Datasheet:

Description:

MOSFET N-CH 80V 80A TO220

Quantity:

Delivery:

Payment:

In Stock : 34

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2500 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.4mOhm @ 23A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 500µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	103W (Tc)
Series	U-MOSVIII-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	TK46E08