TK5Q60W,S1VQ
detaildesc

TK5Q60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK5Q60W,S1VQ

Package:

I-Pak

Datasheet:

-

Description:

MOSFET N CH 600V 5.4A IPAK

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 39

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.472625

    $1.472625

  • 10

    $1.325362

    $13.25362

  • 50

    $1.1781

    $58.905

  • 100

    $1.030838

    $103.0838

  • 500

    $1.001385

    $500.6925

  • 1000

    $0.98175

    $981.75

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 380 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 900mOhm @ 2.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 270µA
Supplier Device Package I-Pak
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 60W (Tc)
Series DTMOSIV
Package / Case TO-251-3 Stub Leads, IPak
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number TK5Q60