TK8R2E06PL,S1X

Toshiba Semiconductor and Storage

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TK8R2E06PL,S1X

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Package:

TO-220

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Description:

PB-F POWER MOSFET TRANSISTOR TO-

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Operating Temperature	175°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1990 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	8.2mOhm @ 25A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 300µA
Supplier Device Package	TO-220
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	81W (Tc)
Series	U-MOSIX-H
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Toshiba Semiconductor and Storage
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube