TK90S06N1L,LQ
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TK90S06N1L,LQ

Toshiba Semiconductor and Storage

Product No:

TK90S06N1L,LQ

Package:

DPAK+

Datasheet:

-

Description:

MOSFET N-CH 60V 90A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 240

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.407577

    $1.407577

  • 10

    $1.26682

    $12.6682

  • 50

    $1.126062

    $56.3031

  • 100

    $0.985304

    $98.5304

  • 500

    $0.957153

    $478.5765

  • 1000

    $0.938385

    $938.385

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Product Information

Parameter Info

User Guide

Operating Temperature 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.3mOhm @ 45A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 500µA
Supplier Device Package DPAK+
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 157W (Tc)
Series U-MOSVIII-H
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Ta)
Mfr Toshiba Semiconductor and Storage
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number TK90S06